سال انتشار: ۱۳۸۸

محل انتشار: سومین کنفرانس نانوساختارها

تعداد صفحات: ۴

نویسنده(ها):

M. Javad Sharifi – aFacaulty of Electrical and Computer, Shahid Beheshti University, Tehran, Iran
M Sanaeepur – Facaulty of Electrical and Computer, Shahid Beheshti University, Tehran, Iran

چکیده:

In this paper previous works on CNFET compact modeling are reviewed and a new compact model for ambipolar CNFETs is suggested. This model employs some other features of ambipolar CNFETs that were not included in previous models such as work function engineering and insulator thickness variation. It also extends the I/V range from only positive VGS and only positive VDS to a full range of positive/negative VGS and VDS , hence, it covers all four possible ranges of bias.