سال انتشار: ۱۳۸۵
محل انتشار: اولین کنفرانس فناوری نانو در محیط زیست
تعداد صفحات: ۸
Etemad – Department of Electrical and Computer Engineering, Isfahan University of Technology, Isfahan 84155, Iran
Salimi – Department of Material Engineering, Isfahan University of Technology, Isfahan 84155, Iran
This paper proposes a new method of constructing nanoscale memories. The great distinction between this proposition, and other usual nano-memories, is that it is not based on typical transistors. A Si nanocrystal based memory gives the opportunity to build small, nonvolatile memories which can perform accurately, while consuming the least possible amount of materials for its construction. The consumption of energy, as well as construction material, is a great concern for environmental health.