سال انتشار: ۱۳۸۴

محل انتشار: هشتمین کنفرانس دانشجویی مهندسی برق

تعداد صفحات: ۱۰

نویسنده(ها):

Somayyeh Rahmani – University of tarbiat moallem azarbaijan (Tabriz) Electrical department

چکیده:

Recent development advances have allowed have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements formany applications are at a point that the present Si-based power devices can not handle. The requirements include higher blockingvoltage, switching frequencies, efficiency, and reliability. To overcome these limitations,new semiconductor materials for power device applications are needed. For high power requirements, wide band gap semiconductors like silicon carbide (SiC) , gallium nitride (GaN) , and diamond with their superior electrical properties are likely candidates to replace in the near future. This paper compares all the aforementioned wide band gap semiconductors with respect to their promise and applicability for power applications and predicts the futureof power device semiconductor materials.