سال انتشار: ۱۳۸۶
محل انتشار: دومین کنفرانس نانوساختارها
تعداد صفحات: ۲
M Izadifard – Physics Department , Shahrood University of Technology
NQ Thinh – Department of Physics and Measurement Technology
In this paper, the new material GaNAs grown by Molecular Beam Epitaxy method was studied using photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques. Based on the results of PL and ODMR measurements we discussed the formation of some point defects in a GaAs/GaNAs nanostructure system. Two ODMR signals were found for this system. We have attributed them to non-radiative (NR) channels due to these signals correspond to an spin resonance-induced decrease in the PL intensity and could be detected via both the nearband gap and defect-related emission in GaNAs. Based on the magnetic field position of the ODMR signals, the gvalue for the corresponding defects is found to be around 2.