سال انتشار: ۱۳۸۶

محل انتشار: ششمین همایش مراکز تحقیق و توسعه صنایع و معادن

تعداد صفحات: ۷

نویسنده(ها):

Ehsan Rokhsat – DigitalClone Corporation

چکیده:

Today low dropout regulators are widely used in Low Power circuits. This paper presents the design and implementation of a LDO regulator with high current and very low dropout voltage. One of the advantages of this circuit is using an n-channel MOSFET as power transistor. In this circuit Gate Voltage of MOSFET should be higher than input voltage, which is carried by a voltage up converter. The Implemented LDO is designed for a voltage of 11V which with a current of 1A the maximum Dropout will be 25mV, which shows improvement in comparison to conventional regulators.