سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

M. Sadegh Pishvaei – Department of Electronic, Islamic Azad University, Central Tehran Branch, Tehran, Iran
Rahim. Faez – Department of Electronic, Sharif University of Technology, Tehran, Iran

چکیده:

Exceptional electronic and mechanical properties together with nanoscale diameter make carbon nanotubes (CNTs) promising candidates for nanoscale transistors. Semiconducting CNTs can be used as a channel for Field-effect transistors (FETs), and metallic CNTs can serve as interconnect wires. In short devices carrier transport through the device is nearly ballistic . The non-equilibrium Green’s function (NEGF) method has been successfully utilized to investigate the characteristics of nanoscale device such as carbon nanotube (CNT) based transistors [1]. This device is simulated by solving coupled Poisson and Schrodinger equations. Non-equilibrium Green’s function (NEGF) method is used to investigate the transport properties. The uncoupled mode space approach is used to reduce the computational burden[2]. At recent work effect of gate electrostatic on output characteristic in CNTFET has been investigated[3]. But in this paper the effect of gate length and effect of change in gate location between source and drain is investigated.