سال انتشار: ۱۳۸۶

محل انتشار: چهاردهمین کنفرانس اپتیک و فوتونیک ایران

تعداد صفحات: ۶

نویسنده(ها):

S. Masudy-panah – Department of Electrical Engineering, Islamic Azad University, Science and Research Branch, Tehran, Iran
V. Ahmadi – Departemant of Electrical and Computer Engineering, Tarbiat Modares University, Tehran, Iran

چکیده:

In this paper we investigate the performance of avalanche photodiode considering the variation of multiplication region mole fraction. We show that excess noise factor and breakdown voltage, at a given bias voltage, increase for higher mole fraction of Al in AlxGaAs-APDs but on the other hand, performance factor and mean gain decrease inversely. For calculation of the static characteristics of Al1xGa1-xAs-APDs we use the dead space multiplication theory (DSMT).