سال انتشار: ۱۳۸۳

محل انتشار: دوازدهیمن کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

E. Fathi – Device Simulation Laboratory, ECE Department, University of Tehran
B Afzal –
M Fathipour –

چکیده:

The shift-and-Ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistors. The use of original shift-andratio method for Leff extraction of MOS transistors with halo/pocket implants results in systematic errors for Leff. In this paper a modification of the original method has been proposed and tested by simulation. The values of Leff generated by this method are more reasonable than the original shift-and-ratio method.