سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

H Panahi, – Department of Physics, University of Guilan
M Maleki –

چکیده:

The effects of hydrostatic pressure on the shallow donor impurity binding energy in GaAs GaAlAs quantum wells have been studied in the effective mass approximation by using of variational technique for hydrogenic ground state 1s and excited states (2 ,2 ,3 ) x x s p p . It has been shown that these effects are generally functions of the position of impurity and quantum well width. We have also calculated intra donor squared transition matrix elements as functions of impurity position in the presence of hydrostatic pressure.