سال انتشار: ۱۳۸۸

محل انتشار: همایش ملی مهندسی شیمی

تعداد صفحات: ۱۴

نویسنده(ها):

S.A.A Oloomi – PhD Student, Department of Mechanical Engineering, Isfahan University of Technology, Isfahan
A Saboonchi – Associate Professor, Department of Mechanical Engineering, Isfahan University of Technology, Isfahan
A Sedaghat – Assistant Professor, Department of Mechanical Engineering, Isfahan University of Technology, Isfahan

چکیده:

Understanding the radiative properties of semiconductors is essential for the advancement of manufacturing technology, such as rapid thermal processing [1]. Because the major heating source in rapid thermal processing is lamp radiation, knowledge of radiative properties is important fortemperature control during the process. This work uses transfer-matrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed the effect of wave interference in radiative properties of nanoscale multilayer structured. Silicon nitride coating has higher reflectance than Silicon dioxide coating for 0.7 m 0.9 m and1.2 m 2 m , but for 0.9 m 1.2 m silicon oxide coating has higher reflectance than silicon nitride coating. Therefore Silicon nitride coating has higher average reflectance than Silicon dioxide coating in infrared wavelength. Silicon oxide coating has higher average transmittance than Silicon nitride coating in infrared wavelength. This behavior is similar for donars and acceptors. The average emittance for Silicon nitridecoating is 0.28 and for Silicon dioxide coating is 0.2878 for donars, but it for Silicon dioxide coating is 0.2785 and Silicon nitride coating is 0.2650 for acceptors. So donars have higher average emittance than acceptors.Therefore coatings act as wavelength selective radiative properties for radiative energy conversion and thermal radiation detection