سال انتشار: ۱۳۸۶
محل انتشار: بیست و دومین کنفرانس بین المللی برق
تعداد صفحات: ۵
Azimi-Nam – Department of Advanced Material & Renewable Energy , Iranian Research and Organization for Science and Technology
This paper describes the fabrication of polysilicon cell with phosphorous spin-on diffusion technique and the electrical parameters measurement of the fabricated solar cells . The current-voltage characteristics of polycrystalline silicon solar cells were measured in the dark . A diodequivalent model was used to describe the electrical properties of solar cells. The diode ideality factor , the saturation current , the series and
shunt resistance have been measured . The best series resistance which has been obtained for polysilicon solar cell has a value of about 3 Ω . The best shunt resistance is about 14.5 kΩ and the saturation current and the A factor of the polysilicon solar cell which is fabricated by
the phosphorous spin-on diffusion method , are respectively 0.00003 A and 3.2 .