سال انتشار: ۱۳۸۶

محل انتشار: پانزدهیمن کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

چکیده:

We have stutlied the electrical characteristics of a Schottlcy Barrier Double Gate SOI MOSFET (SB-DG-SOI-MOSFET). This structure can operate both in accumulation and inversion mocle and the main current mechanism for this device is tr,tnneling. As Schottlcy barrier height becomes smaller in highly scalecl (SB-DG_ SOI-MOSFET), its performance improves over a similar structure having doped source/drain.