سال انتشار: ۱۳۸۵

محل انتشار: چهاردهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

Hassan Kaatuzian – Electrical Engineering Department, Amirkabir University of Technology, (15914), Tehran, Iran
Sina Mehrabadi –
Ahmad Ajdarzadeh Oskouei –

چکیده:

Using the density matrix theory of interaction between light and matter, and relevant parameters of the relaxation rates for a six-level model, we have shown theoretically the possibility of realizing electromagnetically Induced Transparency (EIT) and Slow Light effects in Pr +3 doped 2 5 Y SiO crystal (Pr : ) +3 YSO . In addition, we have presented a simplified method to analyse EIT effect in such a six level atomic system. Finally, we have demonstrated results of numerical calculation and have compared them with experimental measurements reported recently.