سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

A Asgari – Research Institute for Applied Physics, University of Tabriz, Tabriz
H Eynollahzadeh –

چکیده:

The energy levels of Nitride based III-V quantum Dots have been investigated theoretically using k.p theory. The nitride based QDs have significantly different properties compared to II-VI based QDs and also other III-V based QDs such as InP. III-V based nitride can have both zinc-blende and wurtzite crystal structures whereas GaAs and other VIII− and QDVIII−s exist only in the zinc-blende structure. In this article the hole energy levels and eigenfunctions in spherical GaN quantum dots have been calculated as function of dot radius R for zincblende structure for both zero spin orbit coupling (SOC) and finite SOC. Then on the basis of the zero SOC limit and strong SOC limit and selection rule the hole quantum energy levels are obtained. Our results shows that nitride based VIII−quantum Dots such as GaN, InN, AlN because of having the same λ,splits to the same levels and in the finite SOC, splits to , to . 1S2/12/3,SS1