سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۳

نویسنده(ها):

A Asgari – Research Institute for Applied Physics, University of Tabriz, Tabriz, Tabriz 51665-163, Iran
S Babanezhad –

چکیده:

The wide band gap III–N semiconductor materials have been the subject of intensive investigation, both theoretical and experimental, in view of their applications in electronic and optoelectronic devices. A detailed study of the energy and momentum relaxation together with the determination of the dominant scattering mechanisms in these materials are crucial for obtaining a comprehensive understanding of the carrier dynamics, especially at high operating electric fields. The 2D electron gas at the AlGaN/GaN heterointerface arises as a result of the spontaneous and piezoelectric polarization of the material without any intentional doping. In this work we study an undoped AlGaN/GaN quantum wells. The energy loss rate quantum well are calculated as a function of the external controllable parameters (electrons density), L (well width), TL (lattice temperature), Te (electron temperature), x (percent Al alloy) and numbers of wells for the interaction of the charge carriers with bulk acoustic (deformation potential and piezoelectric scattering) and optical phonons