سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۴

نویسنده(ها):

H von Känel – CNISM and L-NESS, Dipartimento di Fisica del Politecnico di Milano
M Bollani – CNISM and L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca
M Bonfanti – CNISM and L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca
D Chrastina – CNISM and L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Regionale di Como

چکیده:

We present SiGe/Si heterostructures and nanostructures grown by plasma-enhanced chemical vapour deposition (LEPECVD) and processed by optical lithography, electron beam lithography as well as wet chemical and reactive ion etching. Structures based on strained-Ge quantum wells exhibit excellent electrical and optical properties, like hole mobilities up to 120,000 cm2/Vs and sharp excitonic features in the absorption spectra. New device functions are obtained on modulation doped structures patterned by nanolithography