سال انتشار: ۱۳۸۵

محل انتشار: چهاردهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

J. Derakhshandeh – Thin Film Lab Univ. of Tehran
M. BeikAhmadi – Thin Film Lab Univ. of Tehran
K. Baghbani – Thin Film Lab Univ. of Tehran
Y. Abdi – Thin Film Lab Univ. of Tehran

چکیده:

PECVD-grown carbon nanotubes on (100) silicon substrates have been studied and exploited for electron emission applications. After the growth of vertical CNT’s, the grown nano-tubes are encapsulated by means of an insulating TiO2 layer, leading to beamshape emission of electrons from the cathode towards the opposite anode electrode. The electron emission occurs using an anode-cathode voltage of 100 V with ability of direct writing on a photo-resist coated substrates. Straight lines with widths between 50 and 200nm have been successfully drawn. This technique has been applied on P-type (100) silicon substrates for the formation of the gate of N-MOSFET devices. The successful realization of MOSFET devices indicates its usefulness for applications in nano-electronic devices. This device has inversion COX exceeding 0.7μF/cm2, drive current equal to 310μA/μm.