سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

Ismail Saad, – Faculty of Electrical Engineering, University Technology of Malaysia
Mohammad Taghi Ahmadi, –
Razali Ismail, –
Vijay Arora –

چکیده:

The computation of ultimate drift velocity based on the asymmetrical distribution function for quasi-2D nanostructure and 1D quantum limit device has been revealed. The drift velocity is found to be ballistic that converts randomness in zero-field to streamlined one in a very high electric field. The limitation is due to appropriate thermal velocity in non – degenerately doped device that increases with the temperature. However, for degenerately doped device, the limitation is due to the Fermi velocity that increases with carrier concentration but independent of the temperature. The theory developed can be applied for an appropriate drain-current expression in 2D inverted channel of ballistic silicon nano-transistor.