سال انتشار: ۱۳۹۰

محل انتشار: دومین همایش ملی مهندسی اپتیک و لیزر ایران

تعداد صفحات: ۵

نویسنده(ها):

Hossein Movla – Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz 51566, Iran
Foozieh Sohrabi – Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz 51566, Iran
Khadije Khalili – Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz51665-163, Iran
Hamed Azari Najafabadi – Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz51665-163, Iran

چکیده:

This paper indicates the energy conversion efficiency of a quantum dot multilayer solar cell considering impact ionization effect. A p-i-n InxGa1-xN/GaN quantum dot solar cell structure has been taken into account in the calculation. It is shown that the efficiency of a cell strongly depends on the impact ionization in stacked quantum dots at i-region of the cell. In our proposed structure it is demonstrated that, if averaged probability of impact ionization, P, varies from zero to one, maximum efficiency increases by more than 12% (from 43 percent in P=0 to 55 percent in P=1). Also it is demonstrated that by decreasing θ, maximum efficiency increases and reaches to its maximum, 59%, in θ=۲٫