سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

Samaneh. Sharbati – Department of Electronic Engineering, University of Semnan, Semnan, Iran
Ali Asghar Orouji –
Morteza Fathipour – Device and Process Modeling and Simulation Lab., School of Electrical and Computer Eng.

چکیده:

In this paper, we exhibit unique features of Silicon Carbide Field Effect Transistors (SiC MOSFET) in sub-micron dimensions and compare these features with conventional Si MOSFETs. Using two-dimensional simulation, we have investigated the improvement in SiC device performance as compared to Si MOSFETs. Electrical characteristics including forward characteristics, subthreshold slope, drain conductance, Drain Induced Barrier Lowering (DIBL) for this device are discussed