سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

J Hasanzadeh – Department of Physics, University of Guilan P. O. Box: 1914. Rasht, Iran
S Farjami Shayesteh –

چکیده:

It is well known that electronic properties of a semiconductor undergo a drastic change when its size reduces to a few nanometers. This transition from energy band structure in bulk materials to discrete electronic states in analogous nano-materials is understood by a result of quantum confinement. During the past decades, II–IV semiconductor nanoparticles have been synthesized by various wet chemical routes [1–۳]. Recently, transition metal ions doped II–VI nanoparticles have attracted many interests because transition metal ions incorporated into II–VI nanoparticles can alter (improve) optical properties of nanoparticles largely [4–۱۱]. Among this, CdS nanocrystal has been researched due to small band gap, quantum scale ability of CdS nanoparticles in microscope scale for various characterizations. Pure and doped CdS monocrystals and thin layers are often used as photoconducting, photovoltaic or optoelectronic materials. CdS powder is used in the production of light sources emitting in the green region, in the technology of solar cells and photocells