سال انتشار: ۱۳۹۰

محل انتشار: دومین همایش ملی مهندسی اپتیک و لیزر ایران

تعداد صفحات: ۵

نویسنده(ها):

Foozieh Sohrabi – Department of Solid State Physics, Faculty of Physics, University of Tabriz, Tabriz 51566, Iran
Hossein Movla – Department of Solid State Physics, Faculty of Physics, University of Tabriz, Tabriz 51566, Iran
Khadije Khalili – Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), University of Tabriz
Hamed Azari Najafabadi – Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), University of Tabriz

چکیده:

A structure for p-n hetrojunction solar cells have been presented as single wall Carbon Nanotubes (SWCNTs) as absorber and Si as semiconductor window with modest efficiencies. According to Eg=7.98/d (A˚), where d is tube diameter, the band gap of semiconducting SWCNTs (2–۳nm in diameter) is estimated to be less than 0.5 eV and with the Fermi level in the middle of the band gap, the work function is assumed to be about 4.8 eV. For this structure, the J-V characteristics in dark and illumination conditions have been calculated theoretically by exerting general formulation of the current-voltage characteristic of a p-n heterojunction solar cell by assuming that the bands are flat in the junction. It is shown that efficiency of cell in one sun and 1.5 AM is about 12%.