سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۴

نویسنده(ها):

Patrick G Soukiassian – Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex

چکیده:

I present some few novel aspects of nanoscience for silicon carbide surfaces and interfaces that are investigated by near field scanning probes microscopy/spectroscopy using electrons and/or photons, and synchrotron radiation-based photoelectron spectroscopies. It includes the i) formation of an active massively parallel architecture based on Ag/Si nanowires exhibiting a negative differential resistance behavior, ii) deuterium- induced SiC surface metallization with an amazing isotopic effect and iii) selective formation of very thin nitride layer at Si/SiC interface.