سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

I Hassaninia, – Department of Electrical Engineering, Shiraz University,
Z Kordrostami, – Department of Electrical Engineering, Shiraz University
M.H Sheikhi, –
R Ghayour –

چکیده:

A coaxial double gate Schottky barrier field effect transistor (DG-SB-CNTFET) is investigated and compared to conventional single gate structure. In order to derive electrical characteristics, the charge density on the surface of the carbon nanotube and the transmission coefficient through Schottky barriers is calculated using non equilibrium Green’s function formalism (NEGF) along with self consistent calculations that include the Poisson equation. We have shown that the main advantage of the proposed structure is to reduce the ambipolarity and reduction of off-current which make it suitable for future logic applications