سال انتشار: ۱۳۸۵

محل انتشار: چهاردهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

Mahdi Pourfath – Institute for Microelectronics, Technische Universit ¨at Wien
Hans Kosina –
Siegfried Selberherr –

چکیده:

Based on the non-equilibrium Green’s function formalism the performance of carbon nanotubeeld-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the performance is not affected because of the long mean free path for elastic scattering.