سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

R Sahraei – Department of Chemistry, University of Ilam, P. O. Box 65315-516, Ilam, Iran
G Motedayen Aval – Faculty of Chemistry, Tarbiat Moallem University, P. O. Box 15614, Tehran, Iran
M. H. Majles Ara –

چکیده:

Zinc sulfide (ZnS) is a wide band gap and direct transition semiconductor. Consequently, it is a potentially important material to be used as an antireflection coating for heterojunction solar cells [1]. In particular, ZnS is believed to be one of the most promising materials for blue light emitting laser diodes and thin film electroluminescent displays [2]. In this work nanocrystalline ZnS thin films prepared by a new chemical solution deposition route [3, 4]. These thin films have been studied as an antireflection coating which is an important part of the solar cell. The parameters studied include the absorbance/ transmittance/ reflectance spectra, energy band gap, absorption coefficient, refractive index, extinction coefficient, and thickness