سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

M Samadpoor – Institute for Nanoscience and Nanotechnology, Sharif University of Technology
A Iraji zad – Institute for Nanoscience and Nanotechnology
S.M Mahdavi – Physics Department , Sharif University of Technology
A Azarian – Physics Department , Sharif University of Technology

چکیده:

Nanoporous silicon (nPSi) layers were fabricated by electrochemical anodization of p-type crystalline silicon. Then CdO layers were deposited on the PSi substrates by Pulsed Laser Deposition (PLD) method. The nanoporous layer on crystalline silicon drastically reduces the optical losses by increasing the silicon specific surface area. In order to compensate lack of oxygen in CdO layers, samples were annealed in air at 80, 160, 240,320 and 400OC for 10 minutes. The samples showed typical rectifying behaviors as characterized by the current–voltage (I–V) measurement in a dark room. The photoelectric effects have been observed under illumination using normal tungsten light.