سال انتشار: ۱۳۸۵

محل انتشار: چهاردهمین کنفرانس مهندسی برق ایران

تعداد صفحات: ۴

نویسنده(ها):

Z. Sanaee – Thin Film Lab Univ. of Tehran
S. Darbari – Thin Film Lab Univ. of Tehran
J. Koohsorkhi – Thin Film Lab Univ. of Tehran
A. Ebrahimi – Thin Film Lab Univ. of Tehran

چکیده:

Embedded vertically aligned carbon nanotubes in titanium oxide are fabricated and their electron emission behaviour is studied. Growth of
carbon nanotubes is achieved using a DC-PECVD method with a mixture of acetylene and hydrogen. Titanium oxide is deposited using an atmospheric pressure CVD to encapsulate the grown carbon nanotubes. Physical properties of the carbon nanotubes as well as the encapsulated structures have been investigated using TEM and SEM tools. The electron emission characteristics of the encapsulated nanotubes
have been utilized to realize a preliminary display. By addition of a metal layer in the fabrication process, gated field emission nano-transistors are fabricated which show a high on-off ratio.