سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

A Sammak – ECE Department, University of Tehran
S Azimi, –
S Mohajerzadeh –
H Hosseinzadegan –

چکیده:

A novel method for the fabrication of silicon nanostructures on silicon substrates is reported. This technique relies on a hydrogenation-assisted high aspect ratio plasma etching of Silicon substrates capable of producing nanowires with the height of more than 15 micrometers and width of between 100nm and 600nm