سال انتشار: ۱۳۸۶

محل انتشار: پانزدهیمن کنفرانس مهندسی برق ایران

تعداد صفحات: ۵

نویسنده(ها):

Azimi – Thin Film Lab,E CED ept.,University of Tehran
Sammak – Thin Film Lab,E CED ept.,University of Tehran
Khadem Hosseinieh – Thin Film Lab,E CED ept.,University of Tehran
Mohajerzadeh – Thin Film Lab,E CED ept.,University of Tehran

چکیده:

Achieving a novel plasma hydrogenation assisted vertical etching of silicon is reported. The process uses a sequentialydrogenation/oxygenation
and reactive ion etching to stimulate the vertical removal of the exposedS i substrotew ithout damaging the sidewalls. 3-D structures with aspectratios of 30:I and features as small as 0.7um have been realized. Also high aspect ratio etching of PET plastics by means of directional ultra-violet illumination ,s reported. Fabrication of various structures suitable for sensor applications is reported.