سال انتشار: ۱۳۸۶

محل انتشار: پانزدهیمن کنفرانس مهندسی برق ایران

تعداد صفحات: ۶

نویسنده(ها):

Vahid Moalemi – School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
Ali Afzati-Kusha – School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
afzali@ut.ac.ir –

چکیده:

In this paper, we investigate subthresholdp ass-t ransist o r log ics for ultra-l owpower applications. The pe.rformance characteristtcs of dffirent pass-transistor XOR structures operating in the subthreshold region have been compared in 65nm and 90nm technologies.T he results of the simulationss how that the subthreshold logics have some advantages compared to their strong inversion counterparts. The study includes both normal subthreshold pass-transistor logic (sub-PT) and dyramic threshold pass-transistor logic (sub- DTPD. When compared to the former, the latter logic reveals lower sensitivities to temperature and process variations.asst ransistorlo logic