سال انتشار: ۱۳۸۵

محل انتشار: هفتمین سمینار ملی مهندسی سطح و عملیات حرارتی

تعداد صفحات: ۱۰

نویسنده(ها):

Nastaran Mansour – Department of Physics Shahid Beheshti University, Tehran, Iran
Rouhollah Karimzadeh – Department of Physics Shahid Beheshti University, Tehran, Iran
Kazem amshidi-Ghaleh – Department of Physics Azarbijan Tarbiat Moallem University, Tabriz, Iran

چکیده:

We report the observation of laser-induced surface modification of silicon in air using Nd: YAG picosecond ( ps ) pulsed laser irradiation. The n-type (100) silicon wafers exposed to laser fluence levels of 1 to 5 J/cm2. Below the laser fluence level of 1.3 J/cm2 no significant change in the surface morphology is observed. The formation of microstructures occurs at high number of laser pulses (~5000) at laser fluence of 1.3-1.5 J/cm2. The microstructures are cones which grew toward the laser beam and surrounded by deep holes. The ps-formed microstructures are roughly 10 μm tall and separated by 5 μm in the center of the irradiation spot. Nanocolumns (or Nanodroplets) are formed on top of every cone of the laser-induced microstructures surface, reaching a height of ~1 μm and diameter of 100−۲۵۰ nm. At higher applied laser fluence levels (above 1.5 J/cm2), no conical spikes formed and ablated hole with smooth surface is obtained.We will discuss on the possible mechanism underlying these experimental observations.