سال انتشار: ۱۳۸۶

محل انتشار: دومین کنفرانس نانوساختارها

تعداد صفحات: ۲

نویسنده(ها):

H Rezvani – Nanotechnology Reasearch Center of the Ferdowsi University ,Mashhad, Iran
N Shahtahmasebi – Nanotechnology Reasearch Center of the Ferdowsi University ,Mashhad, Iran
M.M Bagheri Mohagheghia – Nanotechnology Reasearch Center of the Ferdowsi University ,Mashhad, Iran
N Tajabor – Physics Department of the Ferdowsi University, Mashhad, Iran

چکیده:

In this work, Cu-doped SnO2 thin films were deposited by spray pyrolysis method .The films were prepared using SnCl4, 5H2O and CuCl2, 2H2O hydro-alcoholic solution. Then, the sensitivity parameter of SnO2 -based O2-gas sensors is studied for various atomic percentages ([Cu]/[Sn] =0,2 ,4 ,6 ,10 ,12.5 ,15 ,20 ,25)% .In addition, the effect of substrate temperature on the sensing behavior of films were also studied. The XRD and SEM structural analysis of thin film sensors confirm the nano structure of the films with SnO2 cassiterite phase. The optical band gap of Cu doped- SnO2 films were obtained from optical absorption spectra by UV-Vis absorption spectroscopy. Measurement of the electrical resistivity of films shows that with increasing of Cu-doping in films up to 10at %, the electrical resistivity increase sharply.