سال انتشار: ۱۳۸۷

محل انتشار: دومین کنگره بین المللی علوم و فناوری نانو

تعداد صفحات: ۲

نویسنده(ها):

m Shahri naseri – Department of Physics, University of Guilan. P. O. Box 41335-1914. Rasht, Iran
s farjami shayesteh –

چکیده:

The theory of spin polarized transport is one of the interesting fields in nanoelectronic and spintronic [1]. Recently Yu and Flatte (YF) have pointed out the possibility of improving the efficiency of spin injection through the application of a strong electric field. The YF analysis of the semiconductor high-field regime neglects electron-electron interaction effects and focuses on the high field non- degenerate regime [2]. D Amico and co- workers studied the effects of the electron-electron interaction on the transport of spin polarized current in metals and doped semiconductors in the diffusive regime, they neglected spin- selective barrier between the magnet and the semiconductor [3-5].In this paper, we solved drift-diffusion equations, which includes many-body correlation effects in degenerate regime that characterized by the inequalitiessFLEeTK〈〈〈〈Βε, where Fε is the Fermi energy of the carriers in the semiconductor and E is the applied electric field. Then study the electric field effect on spin injection in FM/ NMS/ FM structures with spin selective interfacial barriers. Finally, we determine density, current spin polarization and magnetoresistance for both parallel and antiparallel alignment of the ferromagnets